Samsung today announced that it has begun mass production of the industry’s smallest 14 nanometer ultraviolet (EUV) based DRAMs. The chipmaker shipped the industry’s first EUV DRAM in March last year. Now the number of EUV layers has increased to five to offer advanced DRAM chips in DDR5 memory.

As DRAMs continue to shrink towards 10nm technology, EUV technology becomes increasingly important to improve higher performance/efficiency and patterning accuracy. By applying five EUV layers to its 14nm DRAM, Samsung achieved the highest bit density while increasing overall wafer (silicone disk plate) productivity by approximately 20%. In addition, the 14nm process helps reduce power consumption by about 20% compared to previous generation DRAM technology.

Leveraging the next-generation DDR5 standard, Samsung’s 14nm DRAM will pave the way for higher speeds of up to 7.2 gigabits per second (Gbps), more than double the speed of DDR4 up to 3.2 Gbps.

Samsung Electronics plans to expand its 14nm DDR5 portfolio to support the consumer market as well as data center, supercomputers and enterprise server applications. In addition, the 14nm DRAM chip density will be up to 24Gb to better meet the rapidly increasing data demands of IT systems.

Finally, let’s take a look at the words of Jooyoung Lee, Senior Vice President and Head of DRAM Product & Technology, Samsung Electronics:

We have led the DRAM market for nearly three decades, pioneering key modeling technology innovations.

Today Samsung sets another technology milestone with its multi-layer EUV that enables extreme miniaturization at 14nm. This is an achievement not possible with the traditional argon fluoride (ArF) process. We will continue to offer the best and different for memory solutions, fully meeting the need for more performance and capacity in the world of data-driven 5G, artificial intelligence and metadata.

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Michael Lewis


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